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20 May 2020

The 2020 editions of the International Microwave Symposium and Microwave Week (scheduled for 21-26 June in Los Angeles) will be recast as an online event to run this August, MTT-S announced at the beginning of May. The organizers "made this difficult decision, after careful consultation and review with government authorities, partners, and venues." The revamped August program will feature both live and pre-recorded IMS, RFIC, and ARFTG events, including: Technical Sessions; Plenary Sessions; Technical Lectures; 5G Summit; Panel Sessions; the "Three Minute Thesis" competition; MicroApps; Industry Workshops; and a Virtual Exhibition. The organizers will share updates as they become available.

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Cadence® AWR Design Environment® V15 software delivers enhanced analyses with faster/higher-capacity simulation technologies, time-saving design automation, and 5G NR compliant testbenches. It supports greater design efficiency and first-pass success for the development of amplifiers, filters, antennas/arrays, and more.


High-Power, mm-Wave Power Amps in Submicron CMOS

Prototypes of two high-efficiency mm-Wave 5G power amplifiers (in 28-nm planar and 16-nm FinFET bulk CMOS processes) showed performance comparable to SOI CMOS. A single-stage, two-stack FinFET PA generated a Psat of 18.3 dBm from a 1.8-V supply at 39 GHz with 35.5% drain efficiency. A three-stage 28-nm PA achieved a Psat of 26 dBm using a 2.2-V supply, PAE of 26.6%. Aging-acceleration tests demonstrated the robustness of both prototypes.
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Coming Up: More Rescheduled Meetings

The pandemic is prompting widespread schedule changes (see IMS, above). Check both the MTT-S meeting calendar and individual conference web sites carefully. Some notable changes include: Microwave Acoustics & Mechanics (IC-MAM202x) to July 2021; Wireless and Microwave Technology Conference (WAMICON), to 1-3 December; European Microwave Week 2020 to 10-15 Jan., 2021; Microwave Filter Workshop (IMFW202) to autumn 2021.
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Stacked-SOI Power Amp with > 4.5-THz Gain Bandwidth

A new cascaded distributed power amplifier (DPA) topology showed gain band width greater than 4.5 THz, using stacking with multi-drive inter-stack coupling to compensate for the stacked gain cells and input transmission-line losses. A 45nm RFSOI GlobalFoundries prototype achieved the highest reported GBW, continuous-wave (CW) PSAT, and average POUT for 64-QAM 30-Gb/s modulated signal reported to date, outperforming published silicon-based DPAs with comparable power levels.
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Four-Element Wide Modulated Bandwidth MIMO Receiver

A new discrete-time-delay-compensation technique helps cancel spatial interference with wide modulated bandwidths, reducing data-converter dynamic range requirements. A switched-capacitor-based multiply-and-accumulate processor enables 5-ps resolution with a reconfigurable range up to 15 ns. The measured results demonstrate greater than 35-dB spatial interference cancellation over 80-MHz modulated band widths with 52 mW of power consumption.
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Complete mmW Silicon IC solutions for Scalable, Intelligent Arrays that address multiple radio types across all mmW 5G bands available now for high volume production needs.


Wolfspeed includes decades of GaN on SiC design experience in our free and extremely accurate simulation models. Check out video III; an overview of the model and port definitions to enable you to quickly start simulating designs.


µWave Wizard™ software products combine the flexibility of 2D/3D FEM with speed and accuracy of Mode Matching for the analysis, synthesis and optimization of passive components, including horn and reflector antennas.


Based on LTCC, LCP or other organic and ceramic substrate materials the MST group offers all manufacturing steps to produce highly reliable electronic modules for superior HF & microwave applications.


Chip-First Packaging With Multimaterial Jet Printing

Two microwave packages with integrated active and passive components were constructed using a chip-first approach, printing dielectrics and conductor interconnects around a power amplifier. The packages demonstrated maximum gain and saturated output power almost identical with the commercial-off-the-shelf medium power amplifier around which they were built.
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'Innovation at Work' Online Education Opportunities

Once again, IEEE Innovation at Work offers members multiple opportunities to expand their knowledge. Explore this week’s selection of courses on sale for US$10 each. Drop in on IEEE Tech Talk’s interactive Virtual Panel Series (or catch up after they’ve aired). Or explore the wide range of courses in the IEEE eLearning Library.
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Extended-Range BLE5.0/IEEE802.15.4 TxRx SoC

New system-on-a-chip supports extended-range Bluetooth low energy (BLE) 5.0 and IEEE 802.15.4 communication, and integrates dc-dc converter, LDOs, digitally controlled crystal oscillator, PHY, a microcontroller, security engine, SRAM, and eFlash memory. A 28-nm CMOS prototype demonstrated sensitivities of -98 dBm in 2-Mb/s BLE and -102 dBm in 256-kb/s IEEE 802.15.4.
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2-5.5 GHz Beamsteering IC with Vivaldi Antenna

A four-element Vivaldi antenna array and beamsteering receiver IC uses a delay-based local-oscillator phase shift technique for accurate beamsteering. The device exhibits 1° to 2.4° phase-tuning capability for 2-5 GHz bandwidth. The IC fabricated in 28-nm CMOS has a 1.4 x 1.4 mm² footprint and 22.8 mW at 2 GHz for single-receiver path operation.
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RF-Harvesting Printed Rectenna Array T-Shirt

Broadband rectenna arrays (tightly coupled bow-ties screen-printed on a cotton T-shirt) successfully harvested power with up to 32% efficiency at power densities of 4-130-μW/cm² between 2 and 5 GHz. A packaged SMS7630-079LF Schottky diode, connected to each element of the array, measured diode impedance over frequency as a function of dc load and input power. And it's washable.
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Technologies and Techniques for mm-Wave Power Amps

A review of state-of-the-art mm-Wave power amplifiers focuses on broadband design techniques and the main solid-state technologies (including Si, gallium arsenide, GaN, and other III-V materials, and both field-effect and bipolar transistors). The principal broadband design techniques are critically compared, offering a guide for designers undertaking the mm-Wave power-amp challenge.
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